Renesas Technology Corp. has announced the development of an SOI (Silicon On Insulator) CMOS device technology with a new structure that achieves faster operation while reducing the operating voltage, ...

Design of CMOS digital integrated circuits, concentrating on device, circuit, and architectural issues. Analysis and design techniques in custom integrated circuit design, standard cells, memory. Use ...

When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...

The first CMOS chip was created by Fairchild Semiconductor, presented at ISSCC in 1963. The logic topologies used in today’s textbooks originated in this work. P-type devices are slower than N-type by ...

TOKYO, Japan, December 9, 2010 — Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the development of a basic structure for ...

The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs ...

In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...

Fig 1. A typical CMOS input circuit comprises a “P” and “N” transistor. One is fully “on” for logic high, and the other is “on” for a logic low. Fig 2. When a CMOS input pin is at logic high or low ...

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...