Variable Gain Amplifiers (VGAs) implemented in Complementary Metal-Oxide Semiconductor (CMOS) technology have emerged as a critical component in modern analog and mixed-signal systems. These ...
Tokyo, Japan -- Feb 4, 2008 -- Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology. Targeting ...
LONDON — Fujitsu Laboratories Ltd. has said it has developed a millimeter-waveband power amplifier (PA) using a standard 90-nm CMOS process technology. Fujitsu Labs (Tokyo, Japan) applied CMOS ...
(Nanowerk News) Harish Krishnaswamy, assistant professor of electrical engineering at Columbia Engineering, has generated a record amount of power output—by a power of five—using silicon-based ...
Irvine, CA. Pasternack, a provider of RF, microwave, and millimeter wave products, has introduced a rackmount variable-gain RF amplifier with performance from 100 MHz to 18 GHz. This 19-inch ...
Higashihiroshima and Yokohama, Japan, June 5, 2017––Hiroshima University and Mie Fujitsu Semiconductor Limited (MIFS) today announced the development of a low-power millimeter-wave amplifier that ...
The increasing popularity of the 60-GHz unlicensed band for wireless communications, combined with CMOS scaling yielding faster devices, offers a great opportunity for using mainstream CMOS technology ...
The development of a low-power millimeter-wave amplifier that feeds on 0.5 V power supply and covers the frequency range from 80 GHz to 106 GHz has been announced by a team of researchers. Hiroshima ...
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