Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Financial Post

Toshiba's Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules Will Contribute to Smaller, More Efficient Industrial Equipment

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial ...
New Electronics

Toshiba introduces compact, but efficient, SiC MOSFET modules

Toshiba Electronics Europe has leveraged its expertise in wide bandgap (WBG) semiconductor processes to introduce a compact but efficient MOSFET module. The MG800FXF2YMS3 incorporates 3300V-rated dual ...
EDN

Motor-drive modules combine the best of GTOs and IGBTs

Irvine, Calif. – The IGBT-7 Series of 1200-volt insulated gate bipolar transistor modules from Toshiba America Electronic Components tout higher operating frequency and reliability in general inverter ...
Telecompaper

NEW IGBT MODULES FROM TOSHIBA, FUJI ELECTRONIC

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Electronic Design

IGBT Module Optimizes Inverter Solutions

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...
Electronic Design

Soft Punch Through IGBTs in LoPak Modules Boost Power

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...
Business Wire

Toshiba’s Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules Will Contribute to Smaller, More Efficient Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...