Alternatively, you may want to connect its inputs and output in parallel with IC1.C to increase its drive power to the transistor test circuit. IC1.A and IC1.B together with R2, R3 and C1 form an ...
This file type includes high resolution graphics and schematics. The spread of h FE values in a batch of transistors may be wide enough to cause unreliable performance during mass production of a ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
Researchers at the IMEC research institute in Belgium are developing a transistor with a gate width of 22nm (0.022µm) and a gate thickness of 0.5nm to test out new materials for future commercial chip ...
Atomic-scale imperfections in graphene transistors generate unique wireless fingerprints that cannot be copied or predicted, ...
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